Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy

D. O. Filatov; I. A. Kazantseva; D. A. Antonov; I. N. Antonov; M. E. Shenina; O. N. Gorshkov

doi:10.1134/S1027451019010063

Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy

Авторлар: Filatov D.O.¹, Kazantseva I.A.¹, Antonov D.A.¹, Antonov I.N.¹, Shenina M.E.¹, Gorshkov O.N.¹
Мекемелер:
1. Lobachevsky Nizhny Novgorod State University
Шығарылым: Том 13, № 1 (2019)
Беттер: 23-29
Бөлім: Article
URL: https://journals.rcsi.science/1027-4510/article/view/196197
DOI: https://doi.org/10.1134/S1027451019010063
ID: 196197

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Аннотация

Resistive switching in thin (5–10 nm) ZrO₂(Y) films with Au nanoparticles is studied via tunneling atomic force microscopy. Regions of negative differential resistance are observed in the current–voltage curves of individual filaments formed under the probe potential. Their emergence is attributed to resonant electron tunneling through size-quantized electronic states with a discrete energy spectrum in Au nanoparticles embedded in the filaments.