Study of the Effect of Optical Illumination on Resistive Switching in ZrO2(Y) Films with Au Nanoparticles by Tunneling Atomic Force Microscopy


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Аннотация

The effect of optical illumination on the resistive switching in ultrathin (~4 nm) ZrO2(Y) films with embedded single-layer Au nanoparticle arrays 2–3 nm in size is studied via tunneling atomic force microscopy. The ZrO2(Y) films with Au nanoparticles are grown by layerwise magnetron deposition onto glass substrates with a conductive indium-tin-oxide sublayer, followed by annealing at 450°C. An increase in hysteresis due to bipolar resistive switching in the ZrO2(Y) films is observed on the cyclic current–voltage curves of the microscope probe-to-sample contact. The effect is found to manifest itself in a dense Au nanoparticle array (~660 nm) when the contact area is photoexcited through a transparent substrate exposed to the radiation of a semiconductor laser at the plasmon-resonance wavelength. The effect is attributed to the photon-assisted field emission of electrons from Au nanoparticles to the conduction band of ZrO2(Y) in a strong electric field between the microscope probe and the indium-tin-oxide substrate under plasmon-resonance conditions.

Авторлар туралы

A. Novikov

Lobachevsky State University

Хат алмасуға жауапты Автор.
Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

D. Filatov

Lobachevsky State University

Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

D. Antonov

Lobachevsky State University

Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

I. Antonov

Lobachevsky State University

Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

M. Shenina

Lobachevsky State University

Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

O. Gorshkov

Lobachevsky State University

Email: nsv3333@yandex.ru
Ресей, Nizhny Novgorod, 603950

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