Depth Profiling Using Reflected Electron Spectroscopy

Аннотация

Nondestructive depth profiling method based on reflected electron spectroscopy is presented. Large loss spectra of wide energy range is analyzed. Spectra analysis is performed using two approaches: boundary problem solution using invariant imbedding method and approximate interpretation based on Straight Line Approximation with correction coefficients, which depend on ration of evaporated layer thickness and transport mean free path. It is shown that the transport mean free path, not the inelastic mean free path, limits the information depth of the method in opposite of X-ray photoelectron spectroscopy, elastic peak electron spectroscopy. This fact significantly increase depths that can be analyzed using presented method. Thickness of the evaporated Nb layer on the Si substrate is determined.