Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions


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The fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal–insulator–semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodizing current densities in an electrolyte containing fluoride ions, are investigated. The features of variations both in the fluorine-atom distribution and in the effective surfacestate charge on the InAs–layer interface, which are observed during layer growth, are discussed.

Sobre autores

A. Artamonov

OOO Technological Systems for Protective Coatings

Autor responsável pela correspondência
Email: art-bass@mail.ru
Rússia, Moscow, 142172

V. Astakhov

OAO Shvabe Photosystems

Email: art-bass@mail.ru
Rússia, Moscow, 117545

I. Varlashov

National Research University “Moscow Power Engineering Institute”

Email: art-bass@mail.ru
Rússia, Moscow, 111250

P. Mitasov

National Research University “Moscow Power Engineering Institute”

Email: art-bass@mail.ru
Rússia, Moscow, 111250

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