Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral Inert Environment

Abstract

The surface layer of a SiO₂/Si structure implanted with Zn⁺ and O⁺ ions and annealed in neutral and inert atmospheres is studied. At first, n-Si(100) silicon plates are oxidized in dry O₂ to achieve an oxide-film thickness of 0.2 μm. Then, at room temperature, they are sequentially implanted with a dose of 5 × 10¹⁶ cm^–2 of 70-keV ⁶⁴Zn⁺ ions and with a dose of 6.1 × 10¹⁶ cm^–2 of 40-keV \(^{{16}}{\text{O}}_{2}^{ + }\) ions. Plate overheating, compared with room temperature, does not exceed 70°C. The samples are isochronously annealed for 1 h in N₂ at a temperature from 400 to 600°C and then in Ar in the range of 700–1000°C with a step of 100°C. After implantation, the crystalline phase Zn(102) is found to form in the SiO₂ film. After annealing at 700°C, Zn is oxidized to form the ZnO phase. Analysis of the diffraction patterns shows the β-Zn₂SiO₄ and Zn_1.95SiO₄ phases to be additionally formed in the samples after annealing at 800°C. After annealing at 900°C and above, the ZnO phase was not detected in the samples.