Radiation resistance of 4 H -SiC Schottky diodes under irradiation with 0.9-MeV electrons

A. A. Lebedev; K. S. Davydovskaya; A. M. Strelchuk; V. V. Kozlovski

doi:10.1134/S102745101705010X

Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons

作者: Lebedev A.A.¹, Davydovskaya K.S.¹, Strelchuk A.M.¹, Kozlovski V.V.²
隶属关系:
1. Ioffe Physical–Technical Institute
2. St. Petersburg State Polytechnic University
期: 卷 11, 编号 5 (2017)
页面: 924-926
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/194062
DOI: https://doi.org/10.1134/S102745101705010X
ID: 194062

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详细

Degradation of the parameters of 4H-SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm^–1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~10¹⁷ cm^–2. The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n-diodes with the same breakdown voltage.