Simulation of a vacancy defect at the C(111)–2 × 1 surface

Аннотация

The configurations of a vacancy defect on the C(111)–2 × 1 surface, containing atoms with one or two dangling bonds, possessing a high adsorption activity, are calculated. We study the configurations of the vacancy defect at the surface of diamond C(111)–2 × 1 using the semiempirical MNDO method (MOPAC) and the ab initio Hartree–Fock method (PC GAMESS). We calculate the energies of clusters, the orders of atomic bonds, the populations of atomic orbitals, and the localized molecular orbitals.