Effect of High-Fluence Ion Irradiation on the Structure and Electrical Properties of Polycrystalline Diamond


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Аннотация

The results of experimental investigation of the surface layer of polycrystalline diamond modified by high-fluence (≥1018 cm–2) 30-keV Ar+ ion irradiation are presented. The reflection high-energy electron diffraction (RHEED) patterns, Raman spectra, and temperature dependences of the electrical resistance are analyzed. It is found that depending on the irradiation conditions and temperature treatment of diamond a modified layer is formed with either a disorderd structure and semiconductor conductivity or the graphite structure and metallic conductivity.

Авторлар туралы

V. Anikin

Moscow Aviation Institute (National Research University)

Email: anatoly_borisov@mail.ru
Ресей, Moscow, 125993

A. Borisov

Moscow Aviation Institute (National Research University)

Хат алмасуға жауапты Автор.
Email: anatoly_borisov@mail.ru
Ресей, Moscow, 125993

V. Kazakov

Moscow Aviation Institute (National Research University); Keldysh Research Center

Email: anatoly_borisov@mail.ru
Ресей, Moscow, 125993; Moscow, 125438

A. Kudrin

Lobachevsky State University of Nizhny Novgorod

Email: anatoly_borisov@mail.ru
Ресей, Nizhny Novgorod, 603950

E. Mashkova

Skobeltsyn Institute of Nuclear Physics

Email: anatoly_borisov@mail.ru
Ресей, Moscow, 119991

A. Morkovkin

Skobeltsyn Institute of Nuclear Physics

Email: anatoly_borisov@mail.ru
Ресей, Moscow, 119991

M. Ovchinnikov

Moscow Aviation Institute (National Research University); Skobeltsyn Institute of Nuclear Physics

Email: anatoly_borisov@mail.ru
Ресей, Moscow, 125993; Moscow, 119991

E. Pitirimova

Lobachevsky State University of Nizhny Novgorod

Email: anatoly_borisov@mail.ru
Ресей, Nizhny Novgorod, 603950

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