Comparative Analysis of the Effect of RF and DC Magnetron Sputtering Parameters on the Structure Formation of Tantalum-Diboride Thin Films

A. A. Goncharov; A. N. Yunda; A. I. Bazhin; I. V. Shelest; V. V. Buranich

doi:10.1134/S1027451018030291

Comparative Analysis of the Effect of RF and DC Magnetron Sputtering Parameters on the Structure Formation of Tantalum-Diboride Thin Films

作者: Goncharov A.A.¹, Yunda A.N.¹, Bazhin A.I.², Shelest I.V.¹, Buranich V.V.¹
隶属关系:
1. Sumy State University
2. National Science Center of Physics and Technology
期: 卷 12, 编号 3 (2018)
页面: 544-548
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/195448
DOI: https://doi.org/10.1134/S1027451018030291
ID: 195448

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A comparative analysis of the effect of magnetron-sputtering parameters on the formation of the structure of thin tantalum-diboride films deposited using a radio-frequency magnetron sputtering system and a sputtering system with an unbalanced direct-current magnetron is carried out. The sign and magnitude of the bias voltage is shown to significantly affect the structure of tantalum-diboride films.