On the preparation of CuInSe2 thin films via two‒stage selenization

Abstract

A two-stage selenization method for preparing CuInSe₂ thin films in a carrier-gas (nitrogen) flow is developed. The dependences between the morphology and structure of CuInSe₂ thin films and the selenization temperature are studied via electron microscopy and X-ray diffraction analysis. It is demonstrated that the film incorporates copper and indium selenides in the temperature range 300°C ≤ T < 400°C and a stoichiometric film with ordered chalcopyrite is formed at Т = 400°С. The possible mechanism whereby a CuInSe₂ thin film is generated with the participation of selenization centers, namely, Cu₂Se and In₂Se₃ grains, is discussed.