电邮这篇文章 Broadband Silicon Absorber of Terahertz Radiation
- 作者: Pavelyev V.S.1,2, Tukmakov K.N.1,2, Reshetnikov A.S.1,2, Tsibizov I.A.3, Kropotov G.I.3
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隶属关系:
- Samara National Research University
- Image Processing System Institute, Russian Academy of Sciences
- Tydex, LLC
- 期: 卷 13, 编号 6 (2019)
- 页面: 1302-1305
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196594
- DOI: https://doi.org/10.1134/S1027451019060466
- ID: 196594
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详细
A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, absorbance in the indicated frequency range is measured to be more than 95%.
作者简介
V. Pavelyev
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: pavelyev10@mail.ru
俄罗斯联邦, Samara; Samara
K. Tukmakov
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
Email: pavelyev10@mail.ru
俄罗斯联邦, Samara; Samara
A. Reshetnikov
Samara National Research University; Image Processing System Institute, Russian Academy of Sciences
Email: pavelyev10@mail.ru
俄罗斯联邦, Samara; Samara
I. Tsibizov
Tydex, LLC
Email: pavelyev10@mail.ru
俄罗斯联邦, St. Petersburg
G. Kropotov
Tydex, LLC
Email: pavelyev10@mail.ru
俄罗斯联邦, St. Petersburg
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