Development of Field Alignment Methods for Electron-Вeam Lithography in the Case of X-Ray Bragg–Fresnel Lenses


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A method providing more than a tenfold improvement in the precision of exposure field alignment in electron-beam lithography is proposed. The method uses a scanning electron microscope with a standard mechanical positioning system and alignment markers produced by contact photolithography. Bragg–Fresnel lens (1–3–5 orders) with a tenfold decrease in the error of exposure field alignment through the use of mechanical stages are created via this technique.

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M. Knyazev

Institute of Microelectronics Technology and High Purity Materials

编辑信件的主要联系方式.
Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

A. Svintsov

Institute of Microelectronics Technology and High Purity Materials

Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

R. Fahrtdinov

Institute of Microelectronics Technology and High Purity Materials

Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

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