Development of Field Alignment Methods for Electron-Вeam Lithography in the Case of X-Ray Bragg–Fresnel Lenses
- 作者: Knyazev M.A.1, Svintsov A.A.1, Fahrtdinov R.R.1
-
隶属关系:
- Institute of Microelectronics Technology and High Purity Materials
- 期: 卷 12, 编号 5 (2018)
- 页面: 957-960
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196010
- DOI: https://doi.org/10.1134/S1027451018050270
- ID: 196010
如何引用文章
详细
A method providing more than a tenfold improvement in the precision of exposure field alignment in electron-beam lithography is proposed. The method uses a scanning electron microscope with a standard mechanical positioning system and alignment markers produced by contact photolithography. Bragg–Fresnel lens (1–3–5 orders) with a tenfold decrease in the error of exposure field alignment through the use of mechanical stages are created via this technique.
作者简介
M. Knyazev
Institute of Microelectronics Technology and High Purity Materials
编辑信件的主要联系方式.
Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
A. Svintsov
Institute of Microelectronics Technology and High Purity Materials
Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
R. Fahrtdinov
Institute of Microelectronics Technology and High Purity Materials
Email: maleksak@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
补充文件
