Features of the surface morphology of CaF2/Si(100) films obtained by solid-phase epitaxy

Abstract

The dielectric parameters of calcium fluoride films grown on the Si(100) surface by solid-phase epitaxy (group 2) and without it (group 1) are analyzed. It is established experimentally that the deposition mode of CaF₂ films immediately after growth of the Si buffer layer at a substrate temperature of 530°C is not suitable for producing high-quality dielectric layers. The use of solid-phase epitaxy at the initial stage of the nucleation of CaF₂ layers enables the production of single crystal uniformly thick films with high dielectric properties.