On some problems of modeling the distributions of minority charge carriers generated by an electron beam in a semiconductor material

详细

The results of estimating different projection approximation schemes (a modified least-squares method and the Galerkin and Ritz methods) are presented. They are used to simulate the distribution of minority charge carriers, which is observed as a result of the diffusion of minority charge carriers generated by a broad electron beam in a homogeneous semiconductor material. Certain computational features of the implementation of the considered methods are considered.