On the thermal oxidation of VxOy–InP heterostructures formed by the centrifugation of vanadium(V) oxide gel

Аннотация

The optimal mode for the application of a nanoscale layer of vanadium-pentoxide gel on the surface of indium phosphide by centrifugation is determined via spectroscopic ellipsometry and atomic-force microscopy. By oxidizing the formed V_xOy—InP heterostructures, films are obtained with a grain structure, with the height of the relief not exceeding 70 nm. The presence of incompletely oxidized chemostimulator components (VO₂, V₂O₃) in the films and the presence of InVO₄, which binds the V₂O₅ chemostimulator and thereby blocks the regeneration cycle of V⁺⁵ ↔ V⁺⁴, suggest implementation of the transit mechanism of the chemostimulated oxidation of indium phosphide. The data of spectroscopic ellipsometry indicate incomplete kinetic blocking of the diffusion of indium into the films upon oxidation.