Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon
- Authors: Vlasenko L.S.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 47, No 7 (2016)
- Pages: 813-822
- Section: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247505
- DOI: https://doi.org/10.1007/s00723-016-0799-z
- ID: 247505
Cite item
Abstract
Highly sensitive methods of the detection of the electron paramagnetic resonance (EPR) spectra based on the spin-dependent microwave photoconductivity were applied for investigation of the point defects in silicon. The specific features and properties of the excited triplet (spin S = 1) states of defects responsible for spin-dependent recombination of photo excited carriers are considered. The main attention is given to study such defects as oxygen + vacancy complexes and carbon related centers dominantly produced by irradiation.
About the authors
L. S. Vlasenko
Ioffe Institute
Author for correspondence.
Email: leonidvlasenko@yahoo.com
Russian Federation, 194021 Politehnicheskaja 26, St. Petersburg