Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon

Аннотация

Highly sensitive methods of the detection of the electron paramagnetic resonance (EPR) spectra based on the spin-dependent microwave photoconductivity were applied for investigation of the point defects in silicon. The specific features and properties of the excited triplet (spin S = 1) states of defects responsible for spin-dependent recombination of photo excited carriers are considered. The main attention is given to study such defects as oxygen + vacancy complexes and carbon related centers dominantly produced by irradiation.