Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon
- Autores: Vlasenko L.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 47, Nº 7 (2016)
- Páginas: 813-822
- Seção: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247505
- DOI: https://doi.org/10.1007/s00723-016-0799-z
- ID: 247505
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Resumo
Highly sensitive methods of the detection of the electron paramagnetic resonance (EPR) spectra based on the spin-dependent microwave photoconductivity were applied for investigation of the point defects in silicon. The specific features and properties of the excited triplet (spin S = 1) states of defects responsible for spin-dependent recombination of photo excited carriers are considered. The main attention is given to study such defects as oxygen + vacancy complexes and carbon related centers dominantly produced by irradiation.
Sobre autores
L. Vlasenko
Ioffe Institute
Autor responsável pela correspondência
Email: leonidvlasenko@yahoo.com
Rússia, 194021 Politehnicheskaja 26, St. Petersburg