Electrothermal analysis of GaN power submicron field-effect heterotransistors
- 作者: Timofeyev V.1, Semenovskaya E.1, Falieieva O.1
-
隶属关系:
- National Technical University of Ukraine “Kyiv Polytechnic Institute”
- 期: 卷 59, 编号 2 (2016)
- 页面: 66-73
- 栏目: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/176748
- DOI: https://doi.org/10.3103/S0735272716020035
- ID: 176748
如何引用文章
详细
Physical processes and self-heating factors of in a power submicron field-effect heterotransistor have been considered. Mathematical models were proposed and the electrothermal analysis of heterotransistor parameters and characteristics was performed. The impact of thermal processes on parameters of the circuit model and the output frequency characteristics of submicron heterotransistor was shown on the basis of analysis of temperature fields. The relationship of the transistor thermal resistance as a function of its geometry and thermophysical parameters has been established.
作者简介
V. Timofeyev
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
乌克兰, Kyiv
E. Semenovskaya
National Technical University of Ukraine “Kyiv Polytechnic Institute”
编辑信件的主要联系方式.
Email: semprih@gmail.com
乌克兰, Kyiv
O. Falieieva
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
乌克兰, Kyiv