Electrothermal analysis of GaN power submicron field-effect heterotransistors
- Авторы: Timofeyev V.1, Semenovskaya E.1, Falieieva O.1
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Учреждения:
- National Technical University of Ukraine “Kyiv Polytechnic Institute”
- Выпуск: Том 59, № 2 (2016)
- Страницы: 66-73
- Раздел: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/176748
- DOI: https://doi.org/10.3103/S0735272716020035
- ID: 176748
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Аннотация
Physical processes and self-heating factors of in a power submicron field-effect heterotransistor have been considered. Mathematical models were proposed and the electrothermal analysis of heterotransistor parameters and characteristics was performed. The impact of thermal processes on parameters of the circuit model and the output frequency characteristics of submicron heterotransistor was shown on the basis of analysis of temperature fields. The relationship of the transistor thermal resistance as a function of its geometry and thermophysical parameters has been established.
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Об авторах
V. Timofeyev
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Украина, Kyiv
E. Semenovskaya
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Автор, ответственный за переписку.
Email: semprih@gmail.com
Украина, Kyiv
O. Falieieva
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Украина, Kyiv