Electrothermal analysis of GaN power submicron field-effect heterotransistors
- Autores: Timofeyev V.1, Semenovskaya E.1, Falieieva O.1
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Afiliações:
- National Technical University of Ukraine “Kyiv Polytechnic Institute”
- Edição: Volume 59, Nº 2 (2016)
- Páginas: 66-73
- Seção: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/176748
- DOI: https://doi.org/10.3103/S0735272716020035
- ID: 176748
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Resumo
Physical processes and self-heating factors of in a power submicron field-effect heterotransistor have been considered. Mathematical models were proposed and the electrothermal analysis of heterotransistor parameters and characteristics was performed. The impact of thermal processes on parameters of the circuit model and the output frequency characteristics of submicron heterotransistor was shown on the basis of analysis of temperature fields. The relationship of the transistor thermal resistance as a function of its geometry and thermophysical parameters has been established.
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Sobre autores
V. Timofeyev
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Ucrânia, Kyiv
E. Semenovskaya
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Autor responsável pela correspondência
Email: semprih@gmail.com
Ucrânia, Kyiv
O. Falieieva
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Ucrânia, Kyiv