Electrothermal analysis of GaN power submicron field-effect heterotransistors
- Авторлар: Timofeyev V.1, Semenovskaya E.1, Falieieva O.1
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Мекемелер:
- National Technical University of Ukraine “Kyiv Polytechnic Institute”
- Шығарылым: Том 59, № 2 (2016)
- Беттер: 66-73
- Бөлім: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/176748
- DOI: https://doi.org/10.3103/S0735272716020035
- ID: 176748
Дәйексөз келтіру
Аннотация
Physical processes and self-heating factors of in a power submicron field-effect heterotransistor have been considered. Mathematical models were proposed and the electrothermal analysis of heterotransistor parameters and characteristics was performed. The impact of thermal processes on parameters of the circuit model and the output frequency characteristics of submicron heterotransistor was shown on the basis of analysis of temperature fields. The relationship of the transistor thermal resistance as a function of its geometry and thermophysical parameters has been established.
Негізгі сөздер
Авторлар туралы
V. Timofeyev
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Украина, Kyiv
E. Semenovskaya
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Хат алмасуға жауапты Автор.
Email: semprih@gmail.com
Украина, Kyiv
O. Falieieva
National Technical University of Ukraine “Kyiv Polytechnic Institute”
Email: semprih@gmail.com
Украина, Kyiv