A Method of Measuring the S-parameters of Transistors on a Simulator-Analyzer of Amplifiers and UHF Self-Excited Oscillators
- 作者: Savel’kaev S.1, Romas’ko S.1
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隶属关系:
- Siberian State University of Geosystems and Technologies
- 期: 卷 60, 编号 6 (2017)
- 页面: 612-619
- 栏目: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/246205
- DOI: https://doi.org/10.1007/s11018-017-1244-x
- ID: 246205
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详细
A method of measuring the S-parameters of transistors in the case of specified operating characteristics is proposed. The following techniques are considered: sequential normalization of the S-parameters relative to the natural impedance of a matched microstrip design calibrator used for additional calibration of a simulator-analyzer; measurement of the complex reflection coefficient and complex transmission coefficient of a transistor; and determination of the complex reflection coefficient of the matching circuits of a transistor. The flow diagram and a mathematical model of a simulator-analyzer are presented.
作者简介
S. Savel’kaev
Siberian State University of Geosystems and Technologies
编辑信件的主要联系方式.
Email: sergei.savelkaev@yandex.ru
俄罗斯联邦, Novosibirsk
S. Romas’ko
Siberian State University of Geosystems and Technologies
Email: sergei.savelkaev@yandex.ru
俄罗斯联邦, Novosibirsk