A Method of Measuring the  S -parameters of Transistors on a Simulator-Analyzer of Amplifiers and UHF Self-Excited Oscillators

S. V. Savel’kaev; S. V. Romas’ko

doi:10.1007/s11018-017-1244-x

A Method of Measuring the S-parameters of Transistors on a Simulator-Analyzer of Amplifiers and UHF Self-Excited Oscillators

Authors: Savel’kaev S.V.¹, Romas’ko S.V.¹
Affiliations:
1. Siberian State University of Geosystems and Technologies
Issue: Vol 60, No 6 (2017)
Pages: 612-619
Section: Article
URL: https://journals.rcsi.science/0543-1972/article/view/246205
DOI: https://doi.org/10.1007/s11018-017-1244-x
ID: 246205

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Abstract
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Abstract

A method of measuring the S-parameters of transistors in the case of specified operating characteristics is proposed. The following techniques are considered: sequential normalization of the S-parameters relative to the natural impedance of a matched microstrip design calibrator used for additional calibration of a simulator-analyzer; measurement of the complex reflection coefficient and complex transmission coefficient of a transistor; and determination of the complex reflection coefficient of the matching circuits of a transistor. The flow diagram and a mathematical model of a simulator-analyzer are presented.

Keywords

S-parameter of transistors, simulator-analyzer of amplifiers and UHF self-excited oscillators, mathematical model of simulator-analyzer, complex reflection coefficient and complex transmission coefficient of a transistor, complex reflection coefficient of matching circuits of a transistor

About the authors

S. V. Savel’kaev

Siberian State University of Geosystems and Technologies

Author for correspondence.
Email: sergei.savelkaev@yandex.ru
Russian Federation, Novosibirsk

S. V. Romas’ko