A Method of Measuring the S-parameters of Transistors on a Simulator-Analyzer of Amplifiers and UHF Self-Excited Oscillators

Аннотация

A method of measuring the S-parameters of transistors in the case of specified operating characteristics is proposed. The following techniques are considered: sequential normalization of the S-parameters relative to the natural impedance of a matched microstrip design calibrator used for additional calibration of a simulator-analyzer; measurement of the complex reflection coefficient and complex transmission coefficient of a transistor; and determination of the complex reflection coefficient of the matching circuits of a transistor. The flow diagram and a mathematical model of a simulator-analyzer are presented.