Отправить статью по E-mail Measurement of the Profile of the Surface of Monoatomic Multilayer Silicon Nanostructures by an Interference Method
- Авторы: Minaev V.L.1, Levin G.G.1, Latyshev A.V.2, Shcheglov D.V.2
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Учреждения:
- All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
- Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
- Выпуск: Том 60, № 11 (2018)
- Страницы: 1087-1090
- Раздел: Nanometrology
- URL: https://journals.rcsi.science/0543-1972/article/view/246326
- DOI: https://doi.org/10.1007/s11018-018-1322-8
- ID: 246326
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Аннотация
The problem of measuring the profile of the monoatomic multilayer surface of silicon nanostructures by an interference method is considered. The measurements are performed with the use of a Zygo New View 6200 white light scanning electron microscope from the Center of Collective Use for High-Precision Measurement Technologies in Photonics of the All-Russia Research Institute of Optophysical Measurements.
Об авторах
V. Minaev
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Автор, ответственный за переписку.
Email: minaev@vniiofi.ru
Россия, Moscow
G. Levin
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Email: minaev@vniiofi.ru
Россия, Moscow
A. Latyshev
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Россия, Novosibirsk
D. Shcheglov
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Россия, Novosibirsk
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