Enviar artigo por via de e-mail Measurement of the Profile of the Surface of Monoatomic Multilayer Silicon Nanostructures by an Interference Method
- Autores: Minaev V.1, Levin G.1, Latyshev A.2, Shcheglov D.2
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Afiliações:
- All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
- Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
- Edição: Volume 60, Nº 11 (2018)
- Páginas: 1087-1090
- Seção: Nanometrology
- URL: https://journals.rcsi.science/0543-1972/article/view/246326
- DOI: https://doi.org/10.1007/s11018-018-1322-8
- ID: 246326
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Resumo
The problem of measuring the profile of the monoatomic multilayer surface of silicon nanostructures by an interference method is considered. The measurements are performed with the use of a Zygo New View 6200 white light scanning electron microscope from the Center of Collective Use for High-Precision Measurement Technologies in Photonics of the All-Russia Research Institute of Optophysical Measurements.
Sobre autores
V. Minaev
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Autor responsável pela correspondência
Email: minaev@vniiofi.ru
Rússia, Moscow
G. Levin
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Email: minaev@vniiofi.ru
Rússia, Moscow
A. Latyshev
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Rússia, Novosibirsk
D. Shcheglov
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Rússia, Novosibirsk
