Мақаланы E-mail арқылы жіберу Measurement of the Profile of the Surface of Monoatomic Multilayer Silicon Nanostructures by an Interference Method
- Авторлар: Minaev V.1, Levin G.1, Latyshev A.2, Shcheglov D.2
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Мекемелер:
- All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
- Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
- Шығарылым: Том 60, № 11 (2018)
- Беттер: 1087-1090
- Бөлім: Nanometrology
- URL: https://journals.rcsi.science/0543-1972/article/view/246326
- DOI: https://doi.org/10.1007/s11018-018-1322-8
- ID: 246326
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The problem of measuring the profile of the monoatomic multilayer surface of silicon nanostructures by an interference method is considered. The measurements are performed with the use of a Zygo New View 6200 white light scanning electron microscope from the Center of Collective Use for High-Precision Measurement Technologies in Photonics of the All-Russia Research Institute of Optophysical Measurements.
Авторлар туралы
V. Minaev
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Хат алмасуға жауапты Автор.
Email: minaev@vniiofi.ru
Ресей, Moscow
G. Levin
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Email: minaev@vniiofi.ru
Ресей, Moscow
A. Latyshev
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Ресей, Novosibirsk
D. Shcheglov
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Ресей, Novosibirsk
