Email this article Measurement of the Profile of the Surface of Monoatomic Multilayer Silicon Nanostructures by an Interference Method
- Authors: Minaev V.L.1, Levin G.G.1, Latyshev A.V.2, Shcheglov D.V.2
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Affiliations:
- All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
- Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
- Issue: Vol 60, No 11 (2018)
- Pages: 1087-1090
- Section: Nanometrology
- URL: https://journals.rcsi.science/0543-1972/article/view/246326
- DOI: https://doi.org/10.1007/s11018-018-1322-8
- ID: 246326
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Abstract
The problem of measuring the profile of the monoatomic multilayer surface of silicon nanostructures by an interference method is considered. The measurements are performed with the use of a Zygo New View 6200 white light scanning electron microscope from the Center of Collective Use for High-Precision Measurement Technologies in Photonics of the All-Russia Research Institute of Optophysical Measurements.
About the authors
V. L. Minaev
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Author for correspondence.
Email: minaev@vniiofi.ru
Russian Federation, Moscow
G. G. Levin
All-Russia Research Institute of Optophysical Measurements (VNIIOFI)
Email: minaev@vniiofi.ru
Russian Federation, Moscow
A. V. Latyshev
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Russian Federation, Novosibirsk
D. V. Shcheglov
Rzhanov Institute of the Physics of Semiconductors, Russian Academy of Sciences (Siberian Division)
Email: minaev@vniiofi.ru
Russian Federation, Novosibirsk
