Planar Magnetotransistor with Compensation of Collector Current


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The design of a magnetotransistor with two contacts to the base for the purpose of increasing the sensitivity of a planar magnetotransistor is investigated. The possibility of creating a magnetotransistor with compensation of collector currents based on the use of the technology of heterojunction bipolar transistors is considered.

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R. Tikhonov

Technological Center, National Research University of Electronic Technology (MIET)

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Email: R.Tikhonov@tcen.ru
俄罗斯联邦, Moscow

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