Planar Magnetotransistor with Compensation of Collector Current
- 作者: Tikhonov R.D.1
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隶属关系:
- Technological Center, National Research University of Electronic Technology (MIET)
- 期: 卷 60, 编号 8 (2017)
- 页面: 831-838
- 栏目: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/246257
- DOI: https://doi.org/10.1007/s11018-017-1278-0
- ID: 246257
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详细
The design of a magnetotransistor with two contacts to the base for the purpose of increasing the sensitivity of a planar magnetotransistor is investigated. The possibility of creating a magnetotransistor with compensation of collector currents based on the use of the technology of heterojunction bipolar transistors is considered.
作者简介
R. Tikhonov
Technological Center, National Research University of Electronic Technology (MIET)
编辑信件的主要联系方式.
Email: R.Tikhonov@tcen.ru
俄罗斯联邦, Moscow
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