Мақаланы E-mail арқылы жіберу Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation
- Авторлар: Petrosyants K.1, Samburskii L.1,2, Kharitonov I.1, Kozhukhov M.1
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Мекемелер:
- Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
- Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
- Шығарылым: Том 59, № 10 (2017)
- Беттер: 1104-1111
- Бөлім: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/245947
- DOI: https://doi.org/10.1007/s11018-017-1100-z
- ID: 245947
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.
Авторлар туралы
K. Petrosyants
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Хат алмасуға жауапты Автор.
Email: kpetrosyants@hse.ru
Ресей, Moscow
L. Samburskii
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics; Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
Email: kpetrosyants@hse.ru
Ресей, Moscow; Moscow
I. Kharitonov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
Ресей, Moscow
M. Kozhukhov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
Ресей, Moscow
