Отправить статью по E-mail Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation
- Авторы: Petrosyants K.O.1, Samburskii L.M.1,2, Kharitonov I.A.1, Kozhukhov M.V.1
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Учреждения:
- Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
- Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
- Выпуск: Том 59, № 10 (2017)
- Страницы: 1104-1111
- Раздел: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/245947
- DOI: https://doi.org/10.1007/s11018-017-1100-z
- ID: 245947
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Аннотация
The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.
Об авторах
K. Petrosyants
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Автор, ответственный за переписку.
Email: kpetrosyants@hse.ru
Россия, Moscow
L. Samburskii
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics; Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
Email: kpetrosyants@hse.ru
Россия, Moscow; Moscow
I. Kharitonov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
Россия, Moscow
M. Kozhukhov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
Россия, Moscow
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