电邮这篇文章 Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation
- 作者: Petrosyants K.1, Samburskii L.1,2, Kharitonov I.1, Kozhukhov M.1
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隶属关系:
- Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
- Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
- 期: 卷 59, 编号 10 (2017)
- 页面: 1104-1111
- 栏目: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/245947
- DOI: https://doi.org/10.1007/s11018-017-1100-z
- ID: 245947
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详细
The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.
作者简介
K. Petrosyants
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
编辑信件的主要联系方式.
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow
L. Samburskii
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics; Institute of Problems of Design in Microelectronics, Russian Academy of Sciences
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow; Moscow
I. Kharitonov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow
M. Kozhukhov
Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics
Email: kpetrosyants@hse.ru
俄罗斯联邦, Moscow
