Measurement of the Parameters of On-Wafer Semiconductor Devices

Аннотация

A method for the measurement of the S-parameters of semiconductor devices by means of a vector network analyzer and probe station in the millimetric range of frequencies is considered. A high level of precision of measurements is achieved through successive elimination of all error sources. Relationships that relate the effective parameters of the measurement system and the maximal error are presented. An experiment is carried out and results compared to analogous studies.