Measurement of the Parameters of On-Wafer Semiconductor Devices
- Authors: Savin A.A.1, Guba V.G.2, Bykova O.N.2
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Affiliations:
- Tomsk State University of Control Systems and Radio Electronics
- TAIR Scientific and Production Company
- Issue: Vol 59, No 7 (2016)
- Pages: 765-772
- Section: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/245435
- DOI: https://doi.org/10.1007/s11018-016-1044-8
- ID: 245435
Cite item
Abstract
A method for the measurement of the S-parameters of semiconductor devices by means of a vector network analyzer and probe station in the millimetric range of frequencies is considered. A high level of precision of measurements is achieved through successive elimination of all error sources. Relationships that relate the effective parameters of the measurement system and the maximal error are presented. An experiment is carried out and results compared to analogous studies.
About the authors
A. A. Savin
Tomsk State University of Control Systems and Radio Electronics
Author for correspondence.
Email: saasavin@mail.ru
Russian Federation, Tomsk
V. G. Guba
TAIR Scientific and Production Company
Email: saasavin@mail.ru
Russian Federation, Tomsk
O. N. Bykova
TAIR Scientific and Production Company
Email: saasavin@mail.ru
Russian Federation, Tomsk
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