Measurement of the Parameters of On-Wafer Semiconductor Devices
- 作者: Savin A.A.1, Guba V.G.2, Bykova O.N.2
-
隶属关系:
- Tomsk State University of Control Systems and Radio Electronics
- TAIR Scientific and Production Company
- 期: 卷 59, 编号 7 (2016)
- 页面: 765-772
- 栏目: Article
- URL: https://journals.rcsi.science/0543-1972/article/view/245435
- DOI: https://doi.org/10.1007/s11018-016-1044-8
- ID: 245435
如何引用文章
详细
A method for the measurement of the S-parameters of semiconductor devices by means of a vector network analyzer and probe station in the millimetric range of frequencies is considered. A high level of precision of measurements is achieved through successive elimination of all error sources. Relationships that relate the effective parameters of the measurement system and the maximal error are presented. An experiment is carried out and results compared to analogous studies.
作者简介
A. Savin
Tomsk State University of Control Systems and Radio Electronics
编辑信件的主要联系方式.
Email: saasavin@mail.ru
俄罗斯联邦, Tomsk
V. Guba
TAIR Scientific and Production Company
Email: saasavin@mail.ru
俄罗斯联邦, Tomsk
O. Bykova
TAIR Scientific and Production Company
Email: saasavin@mail.ru
俄罗斯联邦, Tomsk
补充文件
