Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors

P. A. Alekseev; Алексеев П. А.; A. N. Smirnov; Смирнов А. Н.; V. A. Sharov; Шаров В. А.; B. R. Borodin; Бородин Б. Р.; E. V. Kunitsyna; Куницына Е. В.

doi:10.31857/S0367676523701430

Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors

Autores: Alekseev P.¹, Smirnov A.¹, Sharov V.¹, Borodin B.¹, Kunitsyna E.¹
Afiliações:
1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Edição: Volume 87, Nº 6 (2023)
Páginas: 829-832
Seção: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/135404
DOI: https://doi.org/10.31857/S0367676523701430
EDN: https://elibrary.ru/VLLSLD
ID: 135404

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Resumo

Pinning of the Fermi level on the oxidized (110) surface of AIII-Sb semiconductors (GaSb, Ga_0.78In_0.22As_0.18Sb_0.82, Ga_0.66Al_0.34As_0.025Sb_0.975) was studied. It is shown that the Fermi level is pinned at 4.65 ± 0.1 eV from the vacuum level. The presence of Sb was shown for the photooxidized Ga_0.78In_0.22As_0.18Sb_0.82 and Ga_0.66Al_0.34As_0.025Sb_0.975 surfaces. The formation of Sb on the surface because of faster oxidation of group III elements results in pinning of the Fermi level at the same distance from the vacuum level in III-Sb compounds.

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