Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors
- 作者: Alekseev P.1, Smirnov A.1, Sharov V.1, Borodin B.1, Kunitsyna E.1
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隶属关系:
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- 期: 卷 87, 编号 6 (2023)
- 页面: 829-832
- 栏目: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135404
- DOI: https://doi.org/10.31857/S0367676523701430
- EDN: https://elibrary.ru/VLLSLD
- ID: 135404
如何引用文章
详细
Pinning of the Fermi level on the oxidized (110) surface of AIII-Sb semiconductors (GaSb, Ga0.78In0.22As0.18Sb0.82, Ga0.66Al0.34As0.025Sb0.975) was studied. It is shown that the Fermi level is pinned at 4.65 ± 0.1 eV from the vacuum level. The presence of Sb was shown for the photooxidized Ga0.78In0.22As0.18Sb0.82 and Ga0.66Al0.34As0.025Sb0.975 surfaces. The formation of Sb on the surface because of faster oxidation of group III elements results in pinning of the Fermi level at the same distance from the vacuum level in III-Sb compounds.
作者简介
P. Alekseev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
A. Smirnov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
V. Sharov
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
B. Borodin
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
E. Kunitsyna
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: prokhor@mail.ioffe.ru
Russia, 194021, Saint-Petersburg
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