Enviar artigo por via de e-mail Growth and electron transport characteristics of epitaxial thin strontium iridate films
- Autores: Moskal I.1,2, Nagornykh K.3, Petrzhik A.1, Kislinsky Y.1, Konstantinyan K.1, Shadrin A.1,3, Ovsyannikov G.1
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Afiliações:
- Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
- MIREA – Russian Technological University
- Moscow Institute of Physics and Technology
- Edição: Volume 87, Nº 3 (2023)
- Páginas: 429-433
- Seção: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135310
- DOI: https://doi.org/10.31857/S0367676522700752
- EDN: https://elibrary.ru/HHPYNQ
- ID: 135310
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Resumo
The results of a study of epitaxial thin films of strontium iridate with the compositions Sr2IrO4 and SrIrO3 obtained by laser ablation and direct current cathode sputtering, respectively, are presented. Data on the growth technology, crystal structure, electrophysical parameters are given, and the activation energy for low-defect dielectric Sr2IrO4 films is calculated.
Sobre autores
I. Moskal
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; MIREA – Russian Technological University
Autor responsável pela correspondência
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 107996, Moscow
K. Nagornykh
Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 141701, Dolgoprudny
A. Petrzhik
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
Yu. Kislinsky
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
K. Konstantinyan
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
A. Shadrin
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 141701, Dolgoprudny
G. Ovsyannikov
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
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