Email this article Growth and electron transport characteristics of epitaxial thin strontium iridate films
- Authors: Moskal I.E.1,2, Nagornykh K.E.3, Petrzhik A.M.1, Kislinsky Y.V.1, Konstantinyan K.I.1, Shadrin A.V.1,3, Ovsyannikov G.A.1
-
Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
- MIREA – Russian Technological University
- Moscow Institute of Physics and Technology
- Issue: Vol 87, No 3 (2023)
- Pages: 429-433
- Section: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135310
- DOI: https://doi.org/10.31857/S0367676522700752
- EDN: https://elibrary.ru/HHPYNQ
- ID: 135310
Cite item
Open Access
Access granted
Subscription Access
Abstract
The results of a study of epitaxial thin films of strontium iridate with the compositions Sr2IrO4 and SrIrO3 obtained by laser ablation and direct current cathode sputtering, respectively, are presented. Data on the growth technology, crystal structure, electrophysical parameters are given, and the activation energy for low-defect dielectric Sr2IrO4 films is calculated.
About the authors
I. E. Moskal
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; MIREA – Russian Technological University
Author for correspondence.
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 107996, Moscow
K. E. Nagornykh
Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 141701, Dolgoprudny
A. M. Petrzhik
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
Yu. V. Kislinsky
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
K. I. Konstantinyan
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
A. V. Shadrin
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 141701, Dolgoprudny
G. A. Ovsyannikov
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
References
- Kazunori Nishio, Harold Y. Hwang // APL Mater. 2016. V. 4. Art. No. 036102.
- Gutierrez-Llorente A., Iglesias L., Rodr’ıguez-González B., Rivadulla F. // APL Mater. 2018. V. 6. Art. No. 091101.
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // Phys. Rev. B. 2019. V. 100. Art. No. 024501.
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // J. Surf. Invest. X-Ray Synchrotron Neutron Techn. 2020. V. 14. No. 3. P. 547.
- Bobkova I.V., Bobkov A.M. // Phys. Rev. 2017. V. 95. P. 184 512.
- Kislinskii Yu.V., Constantinian K.Y., Ovsyannikov G.A. et al. // Proc. V Int. Conf. FPS’15. (Moscow, 2015). P. 144.
- Yang J., Hao L., Nanney P. et al. // Appl. Phys. Lett. 2019. V. 114. Art. No. 182401.
- Li Z.Z., Schneegans O., Fruchter L. // arXiv: 1610.03722v1. 2016.
- Петржик А.М., Cristiani G., Логвенов Г. и др. // Письма в ЖТФ. 2017. Т. 43. № 12. С. 25; Petrzhik A.M., Cristiani G., Logvenov G. et al. // Tech. Phys. Lett. 2017. V. 43. No. 6. P. 554.
- Nittaya Keawprak, Rong Tu, Takashi Goto // J. Alloys Compounds. 2010. V. 491. P. 441.
- Zhang L., Liang Q., Xiong Y. et al. // Phys. Rev. B. 2015. V. 91. P. 035110.
- Bebenin N.G., Zainullina R.I., Chusheva N.S. et al. // Phys. Rev. B. 2004. V. 69. P. 104434.
- Шкловский Б.И., Эфрос А.Л. Электронные свойства легированных полупроводников. М.: Наука. Физматлит, 1979. 416 с.
Supplementary files
