电邮这篇文章 Growth and electron transport characteristics of epitaxial thin strontium iridate films
- 作者: Moskal I.1,2, Nagornykh K.3, Petrzhik A.1, Kislinsky Y.1, Konstantinyan K.1, Shadrin A.1,3, Ovsyannikov G.1
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隶属关系:
- Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
- MIREA – Russian Technological University
- Moscow Institute of Physics and Technology
- 期: 卷 87, 编号 3 (2023)
- 页面: 429-433
- 栏目: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135310
- DOI: https://doi.org/10.31857/S0367676522700752
- EDN: https://elibrary.ru/HHPYNQ
- ID: 135310
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详细
The results of a study of epitaxial thin films of strontium iridate with the compositions Sr2IrO4 and SrIrO3 obtained by laser ablation and direct current cathode sputtering, respectively, are presented. Data on the growth technology, crystal structure, electrophysical parameters are given, and the activation energy for low-defect dielectric Sr2IrO4 films is calculated.
作者简介
I. Moskal
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; MIREA – Russian Technological University
编辑信件的主要联系方式.
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 107996, Moscow
K. Nagornykh
Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 141701, Dolgoprudny
A. Petrzhik
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
Yu. Kislinsky
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
K. Konstantinyan
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
A. Shadrin
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Moscow Institute of Physics and Technology
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow; Russia, 141701, Dolgoprudny
G. Ovsyannikov
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences
Email: ivan.moscal@yandex.ru
Russia, 125009, Moscow
参考
- Kazunori Nishio, Harold Y. Hwang // APL Mater. 2016. V. 4. Art. No. 036102.
- Gutierrez-Llorente A., Iglesias L., Rodr’ıguez-González B., Rivadulla F. // APL Mater. 2018. V. 6. Art. No. 091101.
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // Phys. Rev. B. 2019. V. 100. Art. No. 024501.
- Petrzhik A.M., Constantinian K.Y., Ovsyannikov G.A. et al. // J. Surf. Invest. X-Ray Synchrotron Neutron Techn. 2020. V. 14. No. 3. P. 547.
- Bobkova I.V., Bobkov A.M. // Phys. Rev. 2017. V. 95. P. 184 512.
- Kislinskii Yu.V., Constantinian K.Y., Ovsyannikov G.A. et al. // Proc. V Int. Conf. FPS’15. (Moscow, 2015). P. 144.
- Yang J., Hao L., Nanney P. et al. // Appl. Phys. Lett. 2019. V. 114. Art. No. 182401.
- Li Z.Z., Schneegans O., Fruchter L. // arXiv: 1610.03722v1. 2016.
- Петржик А.М., Cristiani G., Логвенов Г. и др. // Письма в ЖТФ. 2017. Т. 43. № 12. С. 25; Petrzhik A.M., Cristiani G., Logvenov G. et al. // Tech. Phys. Lett. 2017. V. 43. No. 6. P. 554.
- Nittaya Keawprak, Rong Tu, Takashi Goto // J. Alloys Compounds. 2010. V. 491. P. 441.
- Zhang L., Liang Q., Xiong Y. et al. // Phys. Rev. B. 2015. V. 91. P. 035110.
- Bebenin N.G., Zainullina R.I., Chusheva N.S. et al. // Phys. Rev. B. 2004. V. 69. P. 104434.
- Шкловский Б.И., Эфрос А.Л. Электронные свойства легированных полупроводников. М.: Наука. Физматлит, 1979. 416 с.
