Refinement of the phase diagram of the MnSe– Ga2Se3 system

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Abstract

Phase equilibria in the MnSe–Ga2Se3 system were re-investigated by differential thermal analysis (DTA) and X-ray diffraction (XRD) methods and its phase diagram was constructed, which somewhat differs from that presented earlier in the literature. It was established that the system is characterized by the formation of an intermediate phase (ã) with a wide (47–61 mol % Ga2Se3) homogeneity region. Based on Ga2Se3, a wide (~30 mol %) areas of solid solutions was also found. It is shown that the ã-phase undergoes a polymorphic transformation ã′↔ã at 1183 – 1193 K for various compositions. The high-temperature ã′-phase has a minimum melting at 1205 K and 55 mol% Ga2Se3 and is in peritectic equilibria with solid solutions based on both initial binary compounds. Based on powder diffraction data, the tetragonal lattice parameters of the ã-phase with compositions of 50 and 60 mol % Ga2Se3 were determined. The previously indicated ternary compound of the Mn2Ga2Se5 composition was not been confirmed. A comparative analysis of the obtained results with literature data was carried out.

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About the authors

F. M. Mammadov

Institute of Catalysis and Inorganic Chemistry; Azerbaijan State Pedagogical University

Author for correspondence.
Email: faikmamadov@mail.ru
Azerbaijan, AZ-1143 Baku; AZ-1000, Baku

R. M. Agayeva

Azerbaijan State Pedagogical University

Email: faikmamadov@mail.ru
Azerbaijan, AZ-1000, Baku

I. R. Amiraslanov

Institute of Physics

Email: faikmamadov@mail.ru
Azerbaijan, AZ-1143, Baku

M. B. Babanly

Institute of Catalysis and Inorganic Chemistry

Email: faikmamadov@mail.ru
Azerbaijan, AZ-1143 Baku

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Supplementary files

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2. Fig. 1. Powder diffraction patterns of alloys of the MnSe–Ga2Se3 system.

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3. Fig. 2. Phase diagram of the MnSe–Ga2Se3 system.

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4. Fig. 3. Powder diffraction pattern of a sample of MnGa2Se4 composition, quenched from 1200 K.

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5. Fig. 4. DTA heating curves for some annealed alloys of the MnSe–Ga2Se3 system: 1 - 40, 2 - 50, 3 - 65 mol. % Ga2Se3.

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