Email this article Effects of the Preparation Method on the Dielectric Properties of Ni–Al Layered Double Hydroxides
- Authors: Agafonov A.V.1, Shibaeva V.D.1, Kraev A.S.1, Sirotkin N.A.1, Titov V.A.1, Khlyustova A.V.1
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Affiliations:
- G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
- Issue: Vol 68, No 1 (2023)
- Pages: 4-9
- Section: СИНТЕЗ И СВОЙСТВА НЕОРГАНИЧЕСКИХ СОЕДИНЕНИЙ
- URL: https://journals.rcsi.science/0044-457X/article/view/136301
- DOI: https://doi.org/10.31857/S0044457X22600967
- EDN: https://elibrary.ru/GVEMZS
- ID: 136301
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Abstract
Ni–Al layered double hydroxides (LDHs) are of interest as functional materials. The effects of preparation methods on the dielectric properties of Ni–Al layered double hydroxides were studied on samples prepared from solution (by coprecipitation and a hydrothermal process) and by plasma technology. The prepared layered structures were characterized by advanced analytical methods. The high ζ potentials of the particles prepared in suspensions evidence their high aggregation stability. X-ray powder diffraction and IR spectroscopy were used to determine the phase composition of samples and to identify the interlayer anion. The plasma between Al and Ni electrodes in distilled bulk water gives rise to the formation of Ni–Al LDHs with hydroxide ion as the interlayer anion. Thermal properties of the structures prepared were studied by thermal analysis. The results of dielectric measurements are presented.
About the authors
A. V. Agafonov
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
V. D. Shibaeva
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
A. S. Kraev
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
N. A. Sirotkin
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
V. A. Titov
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
A. V. Khlyustova
G. A. Krestov Institute of Solution Chemistry, Russian Academy of Sciences
Author for correspondence.
Email: kav@isc-ras.ru
153045, Ivanovo, Russia
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