In situ detection of the phase transformations in silicon during nanoindentation
- 作者: Dmitrievskiy A.1, Guseva D.1, Efremova N.1
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隶属关系:
- Tambov State University
- 期: 卷 2016, 编号 10 (2016)
- 页面: 942-945
- 栏目: Promising Materials and Technologies
- URL: https://journals.rcsi.science/0036-0295/article/view/170929
- DOI: https://doi.org/10.1134/S0036029516100037
- ID: 170929
如何引用文章
详细
A method for the in situ detection of the phase transformations of silicon Si-I → Si-II → Si-XII/Si-III during indentation is developed. The method is based on the simultaneous detection of a P–h diagram and the electrical resistance during indentation into a narrow (≈2 μm) gap between metallic films deposited on the silicon surface. The sensitivity of the method makes it possible to resolve an increase in the Si-II silicon volume during indentation.
作者简介
A. Dmitrievskiy
Tambov State University
编辑信件的主要联系方式.
Email: aadmitr@yandex.ru
俄罗斯联邦, Tambov, 392000
D. Guseva
Tambov State University
Email: aadmitr@yandex.ru
俄罗斯联邦, Tambov, 392000
N. Efremova
Tambov State University
Email: aadmitr@yandex.ru
俄罗斯联邦, Tambov, 392000
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