In situ detection of the phase transformations in silicon during nanoindentation

A. A. Dmitrievskiy; D. G. Guseva; N. Yu. Efremova

doi:10.1134/S0036029516100037

In situ detection of the phase transformations in silicon during nanoindentation

Authors: Dmitrievskiy A.A.¹, Guseva D.G.¹, Efremova N.Y.¹
Affiliations:
1. Tambov State University
Issue: Vol 2016, No 10 (2016)
Pages: 942-945
Section: Promising Materials and Technologies
URL: https://journals.rcsi.science/0036-0295/article/view/170929
DOI: https://doi.org/10.1134/S0036029516100037
ID: 170929

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Abstract

A method for the in situ detection of the phase transformations of silicon Si-I → Si-II → Si-XII/Si-III during indentation is developed. The method is based on the simultaneous detection of a P–h diagram and the electrical resistance during indentation into a narrow (≈2 μm) gap between metallic films deposited on the silicon surface. The sensitivity of the method makes it possible to resolve an increase in the Si-II silicon volume during indentation.