In situ detection of the phase transformations in silicon during nanoindentation

Abstract

A method for the in situ detection of the phase transformations of silicon Si-I → Si-II → Si-XII/Si-III during indentation is developed. The method is based on the simultaneous detection of a P–h diagram and the electrical resistance during indentation into a narrow (≈2 μm) gap between metallic films deposited on the silicon surface. The sensitivity of the method makes it possible to resolve an increase in the Si-II silicon volume during indentation.