In situ detection of the phase transformations in silicon during nanoindentation
- Authors: Dmitrievskiy A.A.1, Guseva D.G.1, Efremova N.Y.1
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Affiliations:
- Tambov State University
- Issue: Vol 2016, No 10 (2016)
- Pages: 942-945
- Section: Promising Materials and Technologies
- URL: https://journals.rcsi.science/0036-0295/article/view/170929
- DOI: https://doi.org/10.1134/S0036029516100037
- ID: 170929
Cite item
Abstract
A method for the in situ detection of the phase transformations of silicon Si-I → Si-II → Si-XII/Si-III during indentation is developed. The method is based on the simultaneous detection of a P–h diagram and the electrical resistance during indentation into a narrow (≈2 μm) gap between metallic films deposited on the silicon surface. The sensitivity of the method makes it possible to resolve an increase in the Si-II silicon volume during indentation.
Keywords
About the authors
A. A. Dmitrievskiy
Tambov State University
Author for correspondence.
Email: aadmitr@yandex.ru
Russian Federation, Tambov, 392000
D. G. Guseva
Tambov State University
Email: aadmitr@yandex.ru
Russian Federation, Tambov, 392000
N. Yu. Efremova
Tambov State University
Email: aadmitr@yandex.ru
Russian Federation, Tambov, 392000