Enviar artigo por via de e-mail Growth and spectral properties of Tm:BaY2F8 crystals with different Tm3+ concentration
- Autores: Liu W.1, Li C.1, Xu J.1, Zhou Y.1, Xie H.1, Gao M.1, Yin R.1, Zheng D.1, Lin H.1, Liu J.1, Zeng F.1
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Afiliações:
- Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
- Edição: Volume 90, Nº 1 (2016)
- Páginas: 252-256
- Seção: Short Communications
- URL: https://journals.rcsi.science/0036-0244/article/view/167661
- DOI: https://doi.org/10.1134/S0036024416010076
- ID: 167661
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Resumo
Tm3+:BaY2F8 (Tm:BYF) laser crystals with different doping concentrations were successfully grown by Czochralski method. The optimal growth parameters obtained are as follows: the pulling rate is 0.5 mm/h; the rotation speed is 5 rpm; the cooling rate is 10°C/h. Phase composition, absorption spectra, and fluorescence properties of crystals were studied by XRD and spectral methods. XRD analysis indicates that the crystal belongs to monoclinic system with the C2/m space group. The lattice parameters were calculated and the anisotropy of the crystals was studied, confirming that the a axis is the best growth direction. The absorption peaks around 790 nm became larger with increase of Tm3+ concentration. The cross section of 15% Tm:BYF crystal around 791 nm is 9.47 × 10–21 cm2. The 10% Tm:BYF crystal has the strongest emission peak around 1879.6 nm with the FWHM of 79 nm and the emission cross-section of 2.13 × 10–21 cm2, which is favorable for the 1.88 μm laser output.
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Sobre autores
Wang Liu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Chun Li
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Autor responsável pela correspondência
Email: lichun1210@163.com
República Popular da China, Changchun, 130022
Jialin Xu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Yao Zhou
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Huishuang Xie
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Meiling Gao
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Ru Yin
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Dongyang Zheng
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Hai Lin
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Jinghe Liu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
República Popular da China, Changchun, 130022
Fanming Zeng
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Autor responsável pela correspondência
Email: zengfm@126.com
República Popular da China, Changchun, 130022
