Growth and spectral properties of Tm:BaY2F8 crystals with different Tm3+ concentration


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Tm3+:BaY2F8 (Tm:BYF) laser crystals with different doping concentrations were successfully grown by Czochralski method. The optimal growth parameters obtained are as follows: the pulling rate is 0.5 mm/h; the rotation speed is 5 rpm; the cooling rate is 10°C/h. Phase composition, absorption spectra, and fluorescence properties of crystals were studied by XRD and spectral methods. XRD analysis indicates that the crystal belongs to monoclinic system with the C2/m space group. The lattice parameters were calculated and the anisotropy of the crystals was studied, confirming that the a axis is the best growth direction. The absorption peaks around 790 nm became larger with increase of Tm3+ concentration. The cross section of 15% Tm:BYF crystal around 791 nm is 9.47 × 10–21 cm2. The 10% Tm:BYF crystal has the strongest emission peak around 1879.6 nm with the FWHM of 79 nm and the emission cross-section of 2.13 × 10–21 cm2, which is favorable for the 1.88 μm laser output.

Авторлар туралы

Wang Liu

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Chun Li

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Хат алмасуға жауапты Автор.
Email: lichun1210@163.com
ҚХР, Changchun, 130022

Jialin Xu

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Yao Zhou

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Huishuang Xie

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Meiling Gao

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Ru Yin

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Dongyang Zheng

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Hai Lin

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Jinghe Liu

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Email: zengfm@126.com
ҚХР, Changchun, 130022

Fanming Zeng

Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering

Хат алмасуға жауапты Автор.
Email: zengfm@126.com
ҚХР, Changchun, 130022

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2016