Email this article Growth and spectral properties of Tm:BaY2F8 crystals with different Tm3+ concentration
- Authors: Liu W.1, Li C.1, Xu J.1, Zhou Y.1, Xie H.1, Gao M.1, Yin R.1, Zheng D.1, Lin H.1, Liu J.1, Zeng F.1
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Affiliations:
- Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
- Issue: Vol 90, No 1 (2016)
- Pages: 252-256
- Section: Short Communications
- URL: https://journals.rcsi.science/0036-0244/article/view/167661
- DOI: https://doi.org/10.1134/S0036024416010076
- ID: 167661
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Abstract
Tm3+:BaY2F8 (Tm:BYF) laser crystals with different doping concentrations were successfully grown by Czochralski method. The optimal growth parameters obtained are as follows: the pulling rate is 0.5 mm/h; the rotation speed is 5 rpm; the cooling rate is 10°C/h. Phase composition, absorption spectra, and fluorescence properties of crystals were studied by XRD and spectral methods. XRD analysis indicates that the crystal belongs to monoclinic system with the C2/m space group. The lattice parameters were calculated and the anisotropy of the crystals was studied, confirming that the a axis is the best growth direction. The absorption peaks around 790 nm became larger with increase of Tm3+ concentration. The cross section of 15% Tm:BYF crystal around 791 nm is 9.47 × 10–21 cm2. The 10% Tm:BYF crystal has the strongest emission peak around 1879.6 nm with the FWHM of 79 nm and the emission cross-section of 2.13 × 10–21 cm2, which is favorable for the 1.88 μm laser output.
About the authors
Wang Liu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Chun Li
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Author for correspondence.
Email: lichun1210@163.com
China, Changchun, 130022
Jialin Xu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Yao Zhou
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Huishuang Xie
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Meiling Gao
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Ru Yin
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Dongyang Zheng
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Hai Lin
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Jinghe Liu
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Email: zengfm@126.com
China, Changchun, 130022
Fanming Zeng
Engineering Research Center of Optoeletronic Functional Materials, Ministry of Education, School of Materials Science and Engineering
Author for correspondence.
Email: zengfm@126.com
China, Changchun, 130022
