Simulating equilibrium processes in the Ga(NO 3 ) 3 –H 2 O–NaOH system

E. A. Fedorova; S. A. Bakhteev; L. N. Maskaeva; R. A. Yusupov; V. F. Markov

doi:10.1134/S0036024416060078

Simulating equilibrium processes in the Ga(NO₃)₃–H₂O–NaOH system

Авторы: Fedorova E.A.¹, Bakhteev S.A.², Maskaeva L.N.¹^,3, Yusupov R.A.², Markov V.F.¹^,3
Учреждения:
1. Ural Federal University
2. Kazan National Research Technological University
3. Ural Institute of the State Fire Service, EMERCOM
Выпуск: Том 90, № 6 (2016)
Страницы: 1274-1279
Раздел: Colloid Chemistry and Electrochemistry
URL: https://journals.rcsi.science/0036-0244/article/view/168379
DOI: https://doi.org/10.1134/S0036024416060078
ID: 168379

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Аннотация

Equilibrium processes in the Ga(NO₃)₃–H₂O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.

Ключевые слова

gallium(III) selenide, complexation, hydrolysis, rate of formation, potentiometric titration, mathematical modeling, equilibrium processes, thin films