Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
- Авторы: Fedorova E.A.1, Bakhteev S.A.2, Maskaeva L.N.1,3, Yusupov R.A.2, Markov V.F.1,3
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Учреждения:
- Ural Federal University
- Kazan National Research Technological University
- Ural Institute of the State Fire Service, EMERCOM
- Выпуск: Том 90, № 6 (2016)
- Страницы: 1274-1279
- Раздел: Colloid Chemistry and Electrochemistry
- URL: https://journals.rcsi.science/0036-0244/article/view/168379
- DOI: https://doi.org/10.1134/S0036024416060078
- ID: 168379
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Аннотация
Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.
Об авторах
E. Fedorova
Ural Federal University
Автор, ответственный за переписку.
Email: ka_fed-ra@mail.ru
Россия, Yekaterinburg, 620002
S. Bakhteev
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Россия, Kazan, 420015
L. Maskaeva
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Россия, Yekaterinburg, 620002; Yekaterinburg, 620062
R. Yusupov
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Россия, Kazan, 420015
V. Markov
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Россия, Yekaterinburg, 620002; Yekaterinburg, 620062
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