Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
- Authors: Fedorova E.A.1, Bakhteev S.A.2, Maskaeva L.N.1,3, Yusupov R.A.2, Markov V.F.1,3
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Affiliations:
- Ural Federal University
- Kazan National Research Technological University
- Ural Institute of the State Fire Service, EMERCOM
- Issue: Vol 90, No 6 (2016)
- Pages: 1274-1279
- Section: Colloid Chemistry and Electrochemistry
- URL: https://journals.rcsi.science/0036-0244/article/view/168379
- DOI: https://doi.org/10.1134/S0036024416060078
- ID: 168379
Cite item
Abstract
Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.
About the authors
E. A. Fedorova
Ural Federal University
Author for correspondence.
Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002
S. A. Bakhteev
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Russian Federation, Kazan, 420015
L. N. Maskaeva
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002; Yekaterinburg, 620062
R. A. Yusupov
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Russian Federation, Kazan, 420015
V. F. Markov
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002; Yekaterinburg, 620062
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