Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system


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Abstract

Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.

About the authors

E. A. Fedorova

Ural Federal University

Author for correspondence.
Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002

S. A. Bakhteev

Kazan National Research Technological University

Email: ka_fed-ra@mail.ru
Russian Federation, Kazan, 420015

L. N. Maskaeva

Ural Federal University; Ural Institute of the State Fire Service, EMERCOM

Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002; Yekaterinburg, 620062

R. A. Yusupov

Kazan National Research Technological University

Email: ka_fed-ra@mail.ru
Russian Federation, Kazan, 420015

V. F. Markov

Ural Federal University; Ural Institute of the State Fire Service, EMERCOM

Email: ka_fed-ra@mail.ru
Russian Federation, Yekaterinburg, 620002; Yekaterinburg, 620062

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